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| FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode September 2009 FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode 30 V, 1.6 A, 299 m Features Max rDS(on) = 299 m at VGS = 4.5 V, ID = 1.6 A Max rDS(on) = 410 m at VGS = 2.5 V, ID = 1.3 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides HBM ESD protection level > 1600V (Note3) RoHS Compliant The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. Applications Boost Functions D NC A Pin1 K S G K D BOTTOM MicroFET 1.6x1.6 Thin TOP MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID PD VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Operating and Storage Junction Temperature Range (Note 4) TC = 25C TA = 25C (Note 1a) TA = 25C (Note 1a) Ratings 30 12 1.6 4.5 1.1 0.5 28 1 -55 to +150 Units V V A W V A C Thermal Characteristics RJA RJA RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 110 234 95 210 C/W Package Marking and Ordering Information Device Marking 1T Device FDFME3N311ZT Package MicroFET 1.6x1.6 Thin 1 Reel Size 7'' Tape Width 8mm Quantity 5000 units www.fairchildsemi.com (c)2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V 30 25 1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 4.5 V, ID = 1.6 A VGS = 2.5 V, ID = 1.3 A VGS = 4.5 V, ID = 1.6 A,TJ = 150 C VDS = 5 V, ID = 1.6 A 0.5 1 -3 235 296 327 2.8 299 410 420 S m 1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 55 15 7 7.5 75 20 10 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 4.5 V VDD = 15 V ID = 1.6 A VDD = 15 V, ID = 1.6 A VGS = 4.5 V, RGEN = 6 6 8 22 1.4 1 0.2 0.3 12 16 35 2.8 1.4 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 0.9 A (Note 2) 0.9 12 3.1 1.6 1.2 22 10 A V ns nC IF = 1.6 A, di/dt = 100 A/s Schottky Diode Characteristics IR VF VF Reverse Leakage Forward Voltage Forward Voltage VR = 28 V IF = 1 A IF = 500 mA TJ = 25 C TJ = 85 C TJ = 25 C TJ = 85 C TJ = 25 C TJ = 85 C 15 0.46 0.47 0.45 0.38 0.33 0.48 100 4.7 0.57 A mA V V (c)2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 2 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics Notes: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) MOSFET RJA = 110 C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. (b) MOSFET RJA = 234 C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) Schottky RJA = 95 C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062" thick PCB. (d) Schottky RJA = 210 C/W when mounted on a minimum pad of 2 oz copper. For dual operation. a. 110 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 234 C/W when mounted on a minimum pad of 2 oz copper. c. 95 C/W when mounted on a 1 in2 pad of 2 oz copper. d. 210 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. 4. Rating is applicable to MOSFET only. (c)2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 3 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 6 V VGS = 4.5 V VGS = 3.5 V VGS = 3 V 2.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 3 2.0 VGS = 1.8 V 2 VGS = 2.5 V 1.5 VGS = 2.5 V 1 VGS = 1.8 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.0 VGS = 3 V VGS = 3.5 V VGS = 4.5 V VGS = 6 V 0 0 0.5 0 1 2 3 4 ID, DRAIN CURRENT (A) 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 SOURCE ON-RESISTANCE (m) ID = 1.6 A VGS = 4.5 V rDS(on), DRAIN TO 1000 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 800 ID = 1.6 A 600 TJ = 125 oC 400 200 TJ = 25 oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 4 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0 V ID, DRAIN CURRENT (A) 3 VDS = 5 V 1 TJ = 150 oC 2 TJ = 150 oC 0.1 TJ = 25 oC 1 TJ = 25 oC TJ = -55 oC 0.01 TJ = -55 oC 0 0 1 2 3 4 0.001 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 4 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 4.5 VGS, GATE TO SOURCE VOLTAGE (V) ID = 1.6 A VDD = 10 V 100 Ciss CAPACITANCE (pF) 3.0 VDD = 15 V VDD = 20 V Coss 1.5 10 f = 1 MHz VGS = 0 V Crss 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 4 0.1 1 10 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 Ig, GATE LEAKAGE CURRENT (A) 10 100 us 1 ms -2 ID, DRAIN CURRENT (A) 10 10 10 10 10 10 10 -3 VDS = 0 V 1 -4 0.1 THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms 1s 10 s DC -5 TJ = 150 oC -6 0.01 SINGLE PULSE TJ = MAX RATED RJA = 234 C/W TA = 25 oC o -7 -8 TJ = 25 oC 0.001 0.1 1 10 100 -9 VDS, DRAIN to SOURCE VOLTAGE (V) 0 5 10 15 20 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area IR, REVERSE LEAKAGE CURRENT (mA) Figure 10. Gate Leakage Current vs Gate to Source Voltage 5 IF, FORWARD CURRENT (A) 10 -2 TJ = 125 oC 1 10 -3 TJ = 125 oC TJ = 100 oC 10 -4 0.1 TJ = 25 oC 10 -5 0.01 TJ = 25 oC 10 -6 0 5 10 15 20 25 30 0.001 0.0 0.2 0.4 0.6 0.8 VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (mV) Figure 11. Schottky Diode Reverse Current Figure 12. Schottky Diode Forward Voltage (c)2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 5 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 100 P(PK), PEAK TRANSIENT POWER (W) 10 SINGLE PULSE RJA = 234 C/W TA = 25 C o o 1 0.1 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE RJA = 234 C/W o 0.01 -4 10 10 -3 10 -2 10 -1 10 0 10 1 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 14. Junction-to-Ambient Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 6 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Dimensional Outline and Pad Layout (c)2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 7 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM PowerTrench(R) FPSTM The Power Franchise(R) Auto-SPMTM F-PFSTM PowerXSTM (R) Build it NowTM FRFET(R) Programmable Active DroopTM SM (R) CorePLUSTM Global Power Resource QFET TinyBoostTM CorePOWERTM Green FPSTM QSTM TinyBuckTM CROSSVOLTTM Green FPSTM e-SeriesTM Quiet SeriesTM TinyCalcTM CTLTM GmaxTM RapidConfigureTM TinyLogic(R) Current Transfer LogicTM GTOTM TINYOPTOTM EcoSPARK(R) IntelliMAXTM TM TinyPowerTM EfficentMaxTM Saving our world, 1mW /W /kW at a timeTM ISOPLANARTM TinyPWMTM EZSWITCHTM* SmartMaxTM MegaBuckTM TinyWireTM TM* SMART STARTTM MICROCOUPLERTM TriFault DetectTM SPM(R) MicroFETTM TRUECURRENTTM* STEALTHTM MicroPakTM (R) SuperFETTM MillerDriveTM Fairchild(R) SuperSOTTM-3 MotionMaxTM Fairchild Semiconductor(R) UHC(R) SuperSOTTM-6 Motion-SPMTM (R) FACT Quiet SeriesTM Ultra FRFETTM SuperSOTTM-8 OPTOLOGIC FACT(R) OPTOPLANAR(R) UniFETTM SupreMOSTM (R) (R) FAST VCXTM SyncFETTM FastvCoreTM VisualMaxTM Sync-LockTM FETBenchTM XSTM (R)* PDP SPMTM (R) FlashWriter * Power-SPMTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 8 www.fairchildsemi.com |
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